Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STT5N2VH5
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1,260
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STMicroelectronics MOSFET N-CH 20V SOT23-6 STripFET™ V Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-23-6 1.6W (Tc) N-Channel 20V - 30 mOhm @ 2A, 4.5V 700mV @ 250µA (Min) 4.6nC @ 4.5V 367pF @ 16V 2.5V, 4.5V ±8V
DMN2100UDM-7
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RFQ
2,423
In-stock
Diodes Incorporated MOSFET N-CH 20V 3.3A SOT-26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1W (Ta) N-Channel 20V 3.3A (Ta) 55 mOhm @ 6A, 4.5V 1V @ 250µA - 555pF @ 10V 1.5V, 4.5V ±8V
ZXMN2B03E6TA
RFQ
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RFQ
1,595
In-stock
Diodes Incorporated MOSFET N-CH 20V 4.3A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-23-6 1.1W (Ta) N-Channel 20V 4.3A (Ta) 40 mOhm @ 4.3A, 4.5V 1V @ 250µA 14.5nC @ 4.5V 1160pF @ 10V 1.8V, 4.5V ±8V
DMN3115UDM-7
RFQ
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RFQ
1,198
In-stock
Diodes Incorporated MOSFET N-CH 30V 3.2A SOT-26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 900mW (Ta) N-Channel 30V 3.2A (Ta) 60 mOhm @ 6A, 4.5V 1V @ 250µA - 476pF @ 15V 1.5V, 4.5V ±8V