Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLMS1503TR
RFQ
VIEW
RFQ
3,215
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount Micro6™(TSOP-6) 1.7W (Ta) N-Channel 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
STT6N3LLH6
RFQ
VIEW
RFQ
1,985
In-stock
STMicroelectronics MOSFET N-CH 30V 6A SOT23-6 DeepGATE™, STripFET™ VI Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 1.6W (Tc) N-Channel 30V 6A (Tc) 25 mOhm @ 3A, 10V 1V @ 250µA 3.6nC @ 4.5V 283pF @ 24V 4.5V, 10V ±20V
ZXMN6A08E6QTA
RFQ
VIEW
RFQ
2,594
In-stock
Diodes Incorporated MOSFET N-CH 60V 2.8A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-26 1.1W (Ta) N-Channel 60V 2.8A (Ta) 80 mOhm @ 4.8A, 10V 1V @ 250µA 5.8nC @ 10V 459pF @ 40V 4.5V, 10V ±20V
DMN2100UDM-7
RFQ
VIEW
RFQ
2,423
In-stock
Diodes Incorporated MOSFET N-CH 20V 3.3A SOT-26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-26 1W (Ta) N-Channel 20V 3.3A (Ta) 55 mOhm @ 6A, 4.5V 1V @ 250µA - 555pF @ 10V 1.5V, 4.5V ±8V
ZXMN2B03E6TA
RFQ
VIEW
RFQ
1,595
In-stock
Diodes Incorporated MOSFET N-CH 20V 4.3A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 1.1W (Ta) N-Channel 20V 4.3A (Ta) 40 mOhm @ 4.3A, 4.5V 1V @ 250µA 14.5nC @ 4.5V 1160pF @ 10V 1.8V, 4.5V ±8V
DMN3115UDM-7
RFQ
VIEW
RFQ
1,198
In-stock
Diodes Incorporated MOSFET N-CH 30V 3.2A SOT-26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-26 900mW (Ta) N-Channel 30V 3.2A (Ta) 60 mOhm @ 6A, 4.5V 1V @ 250µA - 476pF @ 15V 1.5V, 4.5V ±8V
TSM3446CX6 RKG
RFQ
VIEW
RFQ
792
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 20V 5.3A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-26 2W (Ta) N-Channel 20V 5.3A (Tc) 33 mOhm @ 5.3A, 4.5V 1V @ 250µA 8.8nC @ 4.5V 700pF @ 10V 2.5V, 4.5V ±12V
ZXMN3A01E6TA
RFQ
VIEW
RFQ
1,450
In-stock
Diodes Incorporated MOSFET N-CH 30V 2.4A SOT-23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 1.1W (Ta) N-Channel 30V 2.4A (Ta) 120 mOhm @ 2.5A, 10V 1V @ 250µA 3.9nC @ 10V 190pF @ 25V 4.5V, 10V ±20V
IRLMS1503TRPBF
RFQ
VIEW
RFQ
1,059
In-stock
Infineon Technologies MOSFET N-CH 30V 3.2A 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount Micro6™(TSOP-6) 1.7W (Ta) N-Channel 30V 3.2A (Ta) 100 mOhm @ 2.2A, 10V 1V @ 250µA 9.6nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
ZXMN6A08E6TA
RFQ
VIEW
RFQ
3,577
In-stock
Diodes Incorporated MOSFET N-CH 60V 2.8A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-26 1.1W (Ta) N-Channel 60V 2.8A (Ta) 80 mOhm @ 4.8A, 10V 1V @ 250µA 5.8nC @ 10V 459pF @ 40V 4.5V, 10V ±20V
ZXMN3A03E6TA
RFQ
VIEW
RFQ
694
In-stock
Diodes Incorporated MOSFET N-CH 30V 3.7A SOT-23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 1.1W (Ta) N-Channel 30V 3.7A (Ta) 50 mOhm @ 7.8A, 10V 1V @ 250µA 12.6nC @ 10V 600pF @ 25V 4.5V, 10V ±20V