- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,403
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.5A 6TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
1,379
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
3,457
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,825
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 6.9A SOT-26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 2W (Ta) | N-Channel | - | 30V | 6.9A (Ta) | 33 mOhm @ 6.9A, 10V | 2.1V @ 250µA | 13nC @ 10V | 755pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
792
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 5.3A SOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 2W (Ta) | N-Channel | - | 20V | 5.3A (Tc) | 33 mOhm @ 5.3A, 4.5V | 1V @ 250µA | 8.8nC @ 4.5V | 700pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
1,742
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.3A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 17.5 mOhm @ 8.3A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1010pF @ 25V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
718
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
