Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTGD3147FT1G
RFQ
VIEW
RFQ
936
In-stock
ON Semiconductor MOSFET P-CH 20V 2.2A 6-TSOP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -25°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 1W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 145 mOhm @ 2.2A, 4.5V 1.5V @ 250µA 5.5nC @ 4.5V 400pF @ 10V 2.5V, 4.5V ±12V
DMN2100UDM-7
RFQ
VIEW
RFQ
2,948
In-stock
Diodes Incorporated MOSFET N-CH 20V 3.3A SOT-26 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1W (Ta) N-Channel - 20V 3.3A (Ta) 55 mOhm @ 6A, 4.5V 1V @ 250µA - 555pF @ 10V 1.5V, 4.5V ±8V
DMN2100UDM-7
RFQ
VIEW
RFQ
2,423
In-stock
Diodes Incorporated MOSFET N-CH 20V 3.3A SOT-26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1W (Ta) N-Channel - 20V 3.3A (Ta) 55 mOhm @ 6A, 4.5V 1V @ 250µA - 555pF @ 10V 1.5V, 4.5V ±8V
DMN2100UDM-7
RFQ
VIEW
RFQ
1,723
In-stock
Diodes Incorporated MOSFET N-CH 20V 3.3A SOT-26 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1W (Ta) N-Channel - 20V 3.3A (Ta) 55 mOhm @ 6A, 4.5V 1V @ 250µA - 555pF @ 10V 1.5V, 4.5V ±8V