- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,047
In-stock
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STMicroelectronics | MOSFET N-CH 650V 10A IPAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 650V | 10A (Tc) | 430 mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | 10V | ±25V | ||||
VIEW |
1,224
In-stock
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ON Semiconductor | MOSFET N-CH 600V SGL IPAK | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 90W (Tc) | N-Channel | - | 600V | 5.5A (Tc) | 1.25 Ohm @ 2.75A, 10V | 5V @ 250µA | 17nC @ 10V | 730pF @ 25V | 10V | ±25V | ||||
VIEW |
2,647
In-stock
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STMicroelectronics | MOSFET N-CH 600V 11A IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | 10V | ±25V |