- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,789
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 50A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 143W (Tc) | N-Channel | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | ||||
VIEW |
1,882
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 20A IPAK | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 110W (Tc) | N-Channel | 60V | 20A (Tc) | 23 mOhm @ 20A, 10V | 3V @ 250µA | 46nC @ 10V | 1480pF @ 25V | 4.5V, 10V | ±16V | ||||
VIEW |
3,992
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 38A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 46W (Tc) | N-Channel | 60V | 38A (Tc) | 17 mOhm @ 20A, 10V | 2.5V @ 250µA | 28.5nC @ 10V | 900pF @ 25V | 4.5V, 10V | ±20V |