Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU64CN10N G
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3,147
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Infineon Technologies MOSFET N-CH 100V 17A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 44W (Tc) N-Channel - 100V 17A (Tc) 64 mOhm @ 17A, 10V 4V @ 20µA 9nC @ 10V 569pF @ 50V 10V ±20V
GP2M002A060PG
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2,655
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Global Power Technologies Group MOSFET N-CH 600V 2A - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 52.1W (Tc) N-Channel - 600V 2A (Tc) 4 Ohm @ 1A, 10V 5V @ 250µA 9nC @ 10V 360pF @ 25V 10V ±30V
RJK6032DPH-E0#T2
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1,760
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Renesas Electronics America MOSFET N-CH 600V 3A TO251 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 40.3W (Tc) N-Channel - 600V 3A (Ta) 4.3 Ohm @ 1.5A, 10V - 9nC @ 10V 285pF @ 25V 10V ±30V
STU7N65M2
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3,657
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STMicroelectronics MOSFET N-CH 650V 5A IPAK MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 60W (Tc) N-Channel - 650V 5A (Tc) 1.15 Ohm @ 2.5A, 10V 4V @ 250µA 9nC @ 10V 270pF @ 100V 10V ±25V
IPU80R2K0P7AKMA1
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RFQ
1,455
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Infineon Technologies MOSFET N-CH 800V 3A TO251-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 24W (Tc) N-Channel - 800V 3A (Tc) 2 Ohm @ 940mA, 10V 3.5V @ 50µA 9nC @ 10V 175pF @ 500V 10V ±20V