Supplier Device Package :
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUF76407D3
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3,309
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ON Semiconductor MOSFET N-CH 60V 12A IPAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 38W (Tc) N-Channel - 60V 12A (Tc) 92 mOhm @ 13A, 10V 3V @ 250µA 11.3nC @ 10V 350pF @ 25V 4.5V, 10V ±16V
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Vishay Siliconix MOSFET N-CH 600V 2A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) N-Channel - 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
IRFU9024N
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Infineon Technologies MOSFET P-CH 55V 11A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 38W (Tc) P-Channel - 55V 11A (Tc) 175 mOhm @ 6.6A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V
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Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 40W (Tc) P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFU120_R4941
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3,976
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IRFU9120N
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2,492
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IRFU320
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1,126
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Vishay Siliconix MOSFET N-CH 400V 3.1A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) N-Channel - 400V 3.1A (Tc) 1.8 Ohm @ 1.9A, 10V 4V @ 250µA 20nC @ 10V 350pF @ 25V 10V ±20V
IRFUC20PBF
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2,691
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Vishay Siliconix MOSFET N-CH 600V 2A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) N-Channel - 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
IRFU320PBF
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2,118
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FQU13N06LTU
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ON Semiconductor MOSFET N-CH 60V 11A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 28W (Tc) N-Channel - 60V 11A (Tc) 115 mOhm @ 5.5A, 10V 2.5V @ 250µA 6.4nC @ 5V 350pF @ 25V 5V, 10V ±20V
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ON Semiconductor MOSFET N-CH 60V 11A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 38W (Tc) N-Channel - 60V 11A (Tc) 107 mOhm @ 8A, 5V 3V @ 250µA 11.3nC @ 10V 350pF @ 25V 5V ±16V
IRFU9024NPBF
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744
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