- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,681
In-stock
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ON Semiconductor | MOSFET N-CH 100V 17A TP | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 1W (Ta), 35W (Tc) | N-Channel | - | 100V | 17A (Ta) | 111 mOhm @ 8.5A, 10V | - | 19nC @ 10V | 1030pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
2,165
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
3,699
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||||
VIEW |
891
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||||
VIEW |
767
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 2.4A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 500V | 2.4A (Tc) | 3 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | 10V | ±20V | ||||
VIEW |
2,242
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 2.4A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 500V | 2.4A (Tc) | 3 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | 10V | ±20V | ||||
VIEW |
744
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |