Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUF75617D3
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3,384
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ON Semiconductor MOSFET N-CH 100V 16A TO-251AA UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 64W (Tc) N-Channel - 100V 16A (Tc) 90 mOhm @ 16A, 10V 4V @ 250µA 39nC @ 20V 570pF @ 25V 10V ±20V
IRFU3910
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3,525
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Infineon Technologies MOSFET N-CH 100V 16A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 79W (Tc) N-Channel - 100V 16A (Tc) 115 mOhm @ 10A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V
2SK3484-AZ
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3,267
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Renesas Electronics America MOSFET N-CH 100V MP-3/TO-251 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (MP-3) 1W (Ta), 30W (Tc) N-Channel - 100V 16A (Tc) 125 mOhm @ 8A, 10V - 20nC @ 10V 900pF @ 10V 4.5V, 10V ±20V
IRFU3910PBF
RFQ
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RFQ
2,935
In-stock
Infineon Technologies MOSFET N-CH 100V 16A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 79W (Tc) N-Channel - 100V 16A (Tc) 115 mOhm @ 10A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V