- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,680
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 163W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.98 mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | 5171pF @ 25V | 10V | ±20V | ||||
VIEW |
3,295
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 500µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | ||||
VIEW |
3,126
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V |