- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,232
In-stock
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Infineon Technologies | MOSFET N-CH 80V 50A TO251-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 79W (Tc) | N-Channel | - | 80V | 50A (Tc) | 13.5 mOhm @ 50A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
3,177
In-stock
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Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
2,804
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
715
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,525
In-stock
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Infineon Technologies | MOSFET N-CH 100V 16A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
3,295
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 500µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,330
In-stock
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Infineon Technologies | MOSFET N-CH 30V 86A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 30V | 86A (Tc) | 6.5 mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,358
In-stock
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Infineon Technologies | MOSFET N-CH 20V 93A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 20V | 93A (Tc) | 5.7 mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | 2160pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,941
In-stock
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Infineon Technologies | MOSFET N-CH 30V 86A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 30V | 86A (Tc) | 6.5 mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,935
In-stock
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Infineon Technologies | MOSFET N-CH 100V 16A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
3,585
In-stock
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Infineon Technologies | MOSFET N-CH 100V 17A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V |