- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
823
In-stock
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ON Semiconductor | MOSFET N-CH 600V 10A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 192W (Tc) | N-Channel | 600V | 10A (Tc) | 730 mOhm @ 5A, 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,943
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 8A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 85W (Tc) | N-Channel | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
