- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
888
In-stock
|
Global Power Technologies Group | MOSFET N-CH 500V 23A TO3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 347W (Tc) | N-Channel | 500V | 23A (Tc) | 220 mOhm @ 11.5A, 10V | 4V @ 250µA | 66nC @ 10V | 3391pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | 30V | 60A (Ta) | 12 mOhm @ 30A, 10V | 3V @ 1mA | 66nC @ 10V | 2300pF @ 10V | 10V | ±20V | |||
|
VIEW |
876
In-stock
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Renesas Electronics America | MOSFET N-CHANNEL 500V 25A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 150W (Ta) | N-Channel | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
