Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH110N25T
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3,873
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IXYS MOSFET N-CH 250V 110A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 694W (Tc) N-Channel 250V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 3mA 157nC @ 10V 9400pF @ 25V 10V ±20V
IXFX55N50
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656
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IXYS MOSFET N-CH 500V 55A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 625W (Tc) N-Channel 500V 55A (Tc) 80 mOhm @ 500mA, 10V 4.5V @ 8mA 330nC @ 10V 9400pF @ 25V 10V ±20V
IXFX50N50
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2,150
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IXYS MOSFET N-CH 500V 50A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 520W (Tc) N-Channel 500V 50A (Tc) 100 mOhm @ 25A, 10V 4.5V @ 8mA 330nC @ 10V 9400pF @ 25V 10V ±20V
IXFX120N25
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RFQ
3,728
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IXYS MOSFET N-CH 250V 120A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel 250V 120A (Tc) 22 mOhm @ 500mA, 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V 10V ±20V
IXFX180N07
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RFQ
2,709
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IXYS MOSFET N-CH 70V 180A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 568W (Tc) N-Channel 70V 180A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 420nC @ 10V 9400pF @ 25V 10V ±20V
IXTH110N25T
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RFQ
3,907
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IXYS MOSFET N-CH 250V 110A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 694W (Tc) N-Channel 250V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 1mA 157nC @ 10V 9400pF @ 25V 10V ±20V