- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,781
In-stock
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IXYS | MOSFET N-CH 55V 260A TO-247 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 480W (Tc) | N-Channel | - | 55V | 260A (Tc) | 3.3 mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
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VIEW |
1,559
In-stock
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IXYS | MOSFET N-CH 900V 26A PLUS 247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 900V | 26A (Tc) | 300 mOhm @ 13A, 10V | 5V @ 8mA | 240nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
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VIEW |
1,033
In-stock
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IXYS | MOSFET N-CH 900V 25A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 900V | 25A (Tc) | 330 mOhm @ 500mA, 10V | 5V @ 8mA | 240nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
