Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,673
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IXYS MOSFET N-CH HiPerFET™, TrenchT2™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 350W (Tc) N-Channel - 150V 76A (Tc) 22 mOhm @ 38A, 10V 4.5V @ 250µA 97nC @ 10V 5800pF @ 25V 10V ±20V
IXFH150N15P
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2,809
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IXYS MOSFET N-CH 150V 150A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 714W (Tc) N-Channel - 150V 150A (Tc) 13 mOhm @ 500mA, 10V 5V @ 4mA 190nC @ 10V 5800pF @ 25V 10V ±20V
STW70N10F4
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3,883
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STMicroelectronics MOSFET N-CH 100V 65A TO-247 DeepGATE™, STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 100V 65A (Tc) 19.5 mOhm @ 30A, 10V 4V @ 250µA 85nC @ 10V 5800pF @ 25V 10V ±20V
IXTH90P10P
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3,976
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IXYS MOSFET P-CH 100V 90A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 462W (Tc) P-Channel - 100V 90A (Tc) 25 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 5800pF @ 25V 10V ±20V