- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,450
In-stock
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IXYS | MOSFET N-CH 200V 46A TO247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | 280W (Tc) | N-Channel | 200V | 46A (Tc) | 55 mOhm @ 28A, 10V | 4V @ 250µA | 230nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,442
In-stock
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IXYS | MOSFET N-CH 500V 26A TO-247AD | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | 300W (Tc) | N-Channel | 500V | 26A (Tc) | 200 mOhm @ 13A, 10V | 4.5V @ 4mA | 95nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,767
In-stock
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IXYS | MOSFET N-CH 500V 24A TO-247 | HiPerFET™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | 300W (Tc) | N-Channel | 500V | 24A (Tc) | 230 mOhm @ 12A, 10V | 4.5V @ 4mA | 95nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,240
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 280W (Tc) | N-Channel | 600V | 16A (Tc) | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
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VIEW |
2,077
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 280W (Tc) | N-Channel | 600V | 16A (Tc) | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
