- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,770
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 160W (Tc) | N-Channel | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
752
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-247AC | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 140W (Tc) | N-Channel | 55V | 64A (Tc) | 16 mOhm @ 37A, 10V | 4V @ 250µA | 89nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
2,839
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 160W (Tc) | N-Channel | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,261
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 5.4A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 150W (Tc) | N-Channel | 800V | 5.4A (Tc) | 2 Ohm @ 3.2A, 10V | 4V @ 250µA | 130nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,449
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 180W (Tc) | N-Channel | 500V | 11A (Tc) | 600 mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,801
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 5.4A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 150W (Tc) | N-Channel | 800V | 5.4A (Tc) | 2 Ohm @ 3.2A, 10V | 4V @ 250µA | 130nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,734
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 140W (Tc) | N-Channel | 55V | 64A (Tc) | 16 mOhm @ 37A, 10V | 4V @ 250µA | 89nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
2,126
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 160W (Tc) | N-Channel | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,376
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 180W (Tc) | N-Channel | 500V | 11A (Tc) | 600 mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
