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- Operating Temperature :
- Supplier Device Package :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,577
In-stock
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ON Semiconductor | MOSFET N-CH 55V 60A TO-247 | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 145W (Tc) | N-Channel | - | 55V | 60A (Tc) | 19 mOhm @ 60A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,191
In-stock
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IXYS | MOSFET N-CH 1200V 3A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 200W (Tc) | N-Channel | - | 1200V | 3A (Tc) | 4.5 Ohm @ 500mA, 10V | 4.5V @ 250µA | 39nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,455
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | - | 800V | 4.1A (Tc) | 3 Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,922
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8.8A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 500V | 8.8A (Tc) | 850 mOhm @ 5.3A, 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
888
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 20A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 200V | 20A (Tc) | 180 mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,547
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 20A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 200V | 20A (Tc) | 180 mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,237
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.8A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 1.2 Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,375
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO-247AC | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 140W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,078
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8.8A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 500V | 8.8A (Tc) | 850 mOhm @ 5.3A, 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,639
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.8A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 1.2 Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,575
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | - | 800V | 4.1A (Tc) | 3 Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,350
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 140W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
