Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH240N055T
RFQ
VIEW
RFQ
767
In-stock
IXYS MOSFET N-CH 55V 240A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 55V 240A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7600pF @ 25V 10V ±20V
IXTH200N085T
RFQ
VIEW
RFQ
1,430
In-stock
IXYS MOSFET N-CH 85V 200A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
STW80NE06-10
RFQ
VIEW
RFQ
2,294
In-stock
STMicroelectronics MOSFET N-CH 60V 80A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-247-3 TO-247-3 250W (Tc) N-Channel - 60V 80A (Tc) 10 mOhm @ 40A, 10V 4V @ 250µA 189nC @ 10V 7600pF @ 25V 10V ±20V
IXFX200N10P
RFQ
VIEW
RFQ
775
In-stock
IXYS MOSFET N-CH 100V 200A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 10V ±20V
IXFX27N80Q
RFQ
VIEW
RFQ
2,638
In-stock
IXYS MOSFET N-CH 800V 27A PLUS 247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 800V 27A (Tc) 320 mOhm @ 500mA, 10V 4.5V @ 4mA 170nC @ 10V 7600pF @ 25V 10V ±20V