Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFPG40
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3,039
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Vishay Siliconix MOSFET N-CH 1000V 4.3A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 1000V 4.3A (Tc) 3.5 Ohm @ 2.6A, 10V 4V @ 250µA 120nC @ 10V 1600pF @ 25V 10V ±20V
IRFPF40
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3,462
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Vishay Siliconix MOSFET N-CH 900V 4.7A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 900V 4.7A (Tc) 2.5 Ohm @ 2.8A, 10V 4V @ 250µA 120nC @ 10V 1600pF @ 25V 10V ±20V
IRFPG40PBF
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2,525
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Vishay Siliconix MOSFET N-CH 1000V 4.3A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 1000V 4.3A (Tc) 3.5 Ohm @ 2.6A, 10V 4V @ 250µA 120nC @ 10V 1600pF @ 25V 10V ±20V
IRFPF40PBF
RFQ
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RFQ
1,257
In-stock
Vishay Siliconix MOSFET N-CH 900V 4.7A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 900V 4.7A (Tc) 2.5 Ohm @ 2.8A, 10V 4V @ 250µA 120nC @ 10V 1600pF @ 25V 10V ±20V
SPW16N50C3FKSA1
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3,823
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Infineon Technologies MOSFET N-CH 560V 16A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V