Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STW60NE10
RFQ
VIEW
RFQ
3,569
In-stock
STMicroelectronics MOSFET N-CH 100V 60A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 100V 60A (Tc) 22 mOhm @ 30A, 10V 4V @ 250µA 185nC @ 10V 5300pF @ 25V 10V ±20V
IXFX120N25P
RFQ
VIEW
RFQ
2,365
In-stock
IXYS MOSFET N-CH 250V 120A PLUS247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 700W (Tc) N-Channel - 250V 120A (Tc) 24 mOhm @ 60A, 10V 5V @ 4mA 185nC @ 10V 8000pF @ 25V 10V ±20V
IXFH100N25P
RFQ
VIEW
RFQ
2,527
In-stock
IXYS MOSFET N-CH 250V 100A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 600W (Tc) N-Channel - 250V 100A (Tc) 27 mOhm @ 50A, 10V 5V @ 4mA 185nC @ 10V 6300pF @ 25V 10V ±20V
IXFX170N20P
RFQ
VIEW
RFQ
941
In-stock
IXYS MOSFET N-CH 200V 170A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 200V 170A (Tc) 14 mOhm @ 500mA, 10V 5V @ 1mA 185nC @ 10V 11400pF @ 25V 10V ±20V
IXFX140N30P
RFQ
VIEW
RFQ
1,701
In-stock
IXYS MOSFET N-CH 300V 140A PLUS 247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 300V 140A (Tc) 24 mOhm @ 70A, 10V 5V @ 8mA 185nC @ 10V 14800pF @ 25V 10V ±20V