Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STY100NS20FD
RFQ
VIEW
RFQ
651
In-stock
STMicroelectronics MOSFET N-CH 200V 100A MAX247 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 MAX247™ 450W (Tc) N-Channel - 200V 100A (Tc) 24 mOhm @ 50A, 10V 4V @ 250µA 360nC @ 10V 7900pF @ 25V 10V ±20V
IXFX150N15
RFQ
VIEW
RFQ
2,057
In-stock
IXYS MOSFET N-CH 150V 150A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 150V 150A (Tc) 12.5 mOhm @ 75A, 10V 4V @ 8mA 360nC @ 10V 9100pF @ 25V 10V ±20V
IXFX90N30
RFQ
VIEW
RFQ
896
In-stock
IXYS MOSFET N-CH 300V 90A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 300V 90A (Tc) 33 mOhm @ 45A, 10V 4V @ 8mA 360nC @ 10V 10000pF @ 25V 10V ±20V
FCH041N60F
RFQ
VIEW
RFQ
3,088
In-stock
ON Semiconductor MOSFET N CH 600V 76A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 595W (Tc) N-Channel - 600V 76A (Tc) 41 mOhm @ 38A, 10V 5V @ 250µA 360nC @ 10V 14365pF @ 100V 10V ±20V