Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH96N20P
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RFQ
3,403
In-stock
IXYS MOSFET N-CH 200V 96A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 600W (Tc) N-Channel 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 4mA 145nC @ 10V 4800pF @ 25V 10V ±20V
IXTH96N20P
RFQ
VIEW
RFQ
674
In-stock
IXYS MOSFET N-CH 200V 96A TO-247 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 600W (Tc) N-Channel 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 250µA 145nC @ 10V 4800pF @ 25V 10V ±20V
IXTH300N04T2
RFQ
VIEW
RFQ
3,613
In-stock
IXYS MOSFET N-CH 40V 300A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel 40V 300A (Tc) 2.5 mOhm @ 50A, 10V 4V @ 250µA 145nC @ 10V 10700pF @ 25V 10V ±20V
FCH110N65F-F155
RFQ
VIEW
RFQ
1,362
In-stock
ON Semiconductor MOSFET N-CH 650V 35A TO247 FRFET®, SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 Long Leads 357W (Tc) N-Channel 650V 35A (Tc) 110 mOhm @ 17.5A, 10V 5V @ 3.5mA 145nC @ 10V 4895pF @ 100V 10V ±20V
R6047ENZ1C9
RFQ
VIEW
RFQ
1,470
In-stock
Rohm Semiconductor MOSFET N-CH 600V 47A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel 600V 47A (Tc) 72 mOhm @ 25.8A, 10V 4V @ 1mA 145nC @ 10V 3850pF @ 25V 10V ±20V