- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,307
In-stock
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ON Semiconductor | MOSFET N-CH 200V 32A TO247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 200V | 32A (Tc) | 75 mOhm @ 16A, 10V | 4V @ 250µA | 120nC @ 10V | 5000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,577
In-stock
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ON Semiconductor | MOSFET N-CH 200V 32A TO-247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 200V | 32A (Tc) | 75 mOhm @ 16A, 10V | 4V @ 250µA | 120nC @ 10V | 5000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,385
In-stock
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IXYS | MOSFET N-CH 500V 13A TO-247AD | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 180W (Tc) | N-Channel | - | 500V | 13A (Tc) | 400 mOhm @ 6.5A, 10V | 4V @ 2.5mA | 120nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,159
In-stock
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Infineon Technologies | MOSFET N-CH 100V 97A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,039
In-stock
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Vishay Siliconix | MOSFET N-CH 1000V 4.3A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 1000V | 4.3A (Tc) | 3.5 Ohm @ 2.6A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
3,462
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 4.7A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 900V | 4.7A (Tc) | 2.5 Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,525
In-stock
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Vishay Siliconix | MOSFET N-CH 1000V 4.3A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 1000V | 4.3A (Tc) | 3.5 Ohm @ 2.6A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,257
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 4.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 900V | 4.7A (Tc) | 2.5 Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,976
In-stock
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IXYS | MOSFET P-CH 100V 90A TO-247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 462W (Tc) | P-Channel | - | 100V | 90A (Tc) | 25 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
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VIEW |
2,219
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 220W (Tc) | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | |||
