Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH182N055T
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1,346
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IXYS MOSFET N-CH 55V 182A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 55V 182A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 114nC @ 10V 4850pF @ 25V 10V ±20V
IXTH152N085T
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RFQ
1,108
In-stock
IXYS MOSFET N-CH 85V 152A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 85V 152A (Tc) 7 mOhm @ 25A, 10V 4V @ 250µA 114nC @ 10V 5500pF @ 25V 10V ±20V
FCH099N60E
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RFQ
2,964
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ON Semiconductor MOSFET N-CH 600V TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 600V 37A (Tc) 99 mOhm @ 18.5A, 10V 3.5V @ 250µA 114nC @ 10V 3465pF @ 380V 10V ±20V
APT20N60BC3G
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RFQ
3,310
In-stock
Microsemi Corporation MOSFET N-CH 600V 20.7A TO-247 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 208W (Tc) N-Channel - 600V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2440pF @ 25V 10V ±20V
SPW20N60C3FKSA1
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RFQ
3,167
In-stock
Infineon Technologies MOSFET N-CH 650V 20.7A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 208W (Tc) N-Channel - 650V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 10V ±20V