Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPW47N65C3FKSA1
RFQ
VIEW
RFQ
2,440
In-stock
Infineon Technologies MOSFET N-CH 650V 47A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 415W (Tc) N-Channel - 650V 47A (Tc) 70 mOhm @ 30A, 10V 3.9V @ 2.7mA 255nC @ 10V 7000pF @ 25V 10V ±20V
IXFX140N25T
RFQ
VIEW
RFQ
3,340
In-stock
IXYS MOSFET N-CH 250V 140A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 250V 140A (Tc) 17 mOhm @ 60A, 10V 5V @ 4mA 255nC @ 10V 19000pF @ 25V 10V ±20V
IXTH60N20L2
RFQ
VIEW
RFQ
3,828
In-stock
IXYS MOSFET N-CH 200V 60A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 540W (Tc) N-Channel - 200V 60A (Tc) 45 mOhm @ 30A, 10V 4.5V @ 250µA 255nC @ 10V 10500pF @ 25V 10V ±20V
FCH085N80-F155
RFQ
VIEW
RFQ
2,889
In-stock
ON Semiconductor MOSFET N-CH 800V 46A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel Super Junction 800V 46A (Tc) 85 mOhm @ 23A, 10V 4.5V @ 4.6mA 255nC @ 10V 10825pF @ 100V 10V ±20V