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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRFP4409	RFQ VIEW	PDF RFQ	3,878 In-stock	Infineon Technologies	MOSFET N-CH 300V 38A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	341W (Tc)	N-Channel	-	300V	38A (Tc)	69 mOhm @ 24A, 10V	5V @ 250µA	125nC @ 10V	5168pF @ 50V	10V	±20V
	IXFH30N60Q	RFQ VIEW	PDF RFQ	3,473 In-stock	IXYS	MOSFET N-CH 600V 30A TO-247AD		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	500W (Tc)	N-Channel	-	600V	30A (Tc)	230 mOhm @ 500mA, 10V	4.5V @ 4mA	125nC @ 10V	4700pF @ 25V	10V	±20V
	FCH072N60	RFQ VIEW	PDF RFQ	2,819 In-stock	ON Semiconductor	MOSFET N-CH 600V 52A TO247		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	481W (Tc)	N-Channel	-	600V	52A (Tc)	72 mOhm @ 26A, 10V	3.5V @ 250µA	125nC @ 10V	5890pF @ 380V	10V	±20V
	IRFP4137PBF	RFQ VIEW	PDF RFQ	3,145 In-stock	Infineon Technologies	MOSFET N-CH 300V 38A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	341W (Tc)	N-Channel	-	300V	38A (Tc)	69 mOhm @ 24A, 10V	5V @ 250µA	125nC @ 10V	5168pF @ 50V	10V	±20V

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