Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH80N075L2
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3,929
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IXYS MOSFET N-CH 75V 80A TO247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 75V 80A (Tc) 24 mOhm @ 40A, 10V 4.5V @ 250µA 103nC @ 10V 3600pF @ 25V 10V ±20V
SPW20N60S5FKSA1
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3,236
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Infineon Technologies MOSFET N-CH 600V 20A TO-247 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 13A, 10V 5.5V @ 1mA 103nC @ 10V 3000pF @ 25V 10V ±20V
IXTH48P20P
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2,359
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IXYS MOSFET P-CH 200V 48A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 462W (Tc) P-Channel - 200V 48A (Tc) 85 mOhm @ 500mA, 10V 4.5V @ 250µA 103nC @ 10V 5400pF @ 25V 10V ±20V
IXTH20P50P
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3,258
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IXYS MOSFET P-CH 500V 20A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) P-Channel - 500V 20A (Tc) 450 mOhm @ 10A, 10V 4V @ 250µA 103nC @ 10V 5120pF @ 25V 10V ±20V