Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PSMN020-150W,127
RFQ
VIEW
RFQ
2,106
In-stock
NXP USA Inc. MOSFET N-CH 150V 73A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 150V 73A (Tc) 20 mOhm @ 25A, 10V 4V @ 1mA 227nC @ 10V 9537pF @ 25V 10V ±20V
IXTH30N50
RFQ
VIEW
RFQ
2,784
In-stock
IXYS MOSFET N-CH 500V 30A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 500V 30A (Tc) 170 mOhm @ 500mA, 10V 4V @ 250µA 227nC @ 10V 5680pF @ 25V 10V ±20V