Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW70N10F4
RFQ
VIEW
RFQ
3,883
In-stock
STMicroelectronics MOSFET N-CH 100V 65A TO-247 DeepGATE™, STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 100V 65A (Tc) 19.5 mOhm @ 30A, 10V 4V @ 250µA 85nC @ 10V 5800pF @ 25V 10V ±20V
STW160N75F3
RFQ
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RFQ
1,036
In-stock
STMicroelectronics MOSFET N-CH 75V 120A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 330W (Tc) N-Channel - 75V 120A (Tc) 4 mOhm @ 60A, 10V 4V @ 250µA 85nC @ 10V 6750pF @ 25V 10V ±20V
R6030ENZ1C9
RFQ
VIEW
RFQ
3,826
In-stock
Rohm Semiconductor MOSFET N-CH 600V 30A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel - 600V 30A (Tc) 130 mOhm @ 14.5A, 10V 4V @ 1mA 85nC @ 10V 2100pF @ 25V 10V ±20V
SPW11N80C3FKSA1
RFQ
VIEW
RFQ
2,537
In-stock
Infineon Technologies MOSFET N-CH 800V 11A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 156W (Tc) N-Channel - 800V 11A (Tc) 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 85nC @ 10V 1600pF @ 100V 10V ±20V