Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH52P10P
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1,657
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IXYS MOSFET P-CH 100V 52A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 300W (Tc) P-Channel 100V 52A (Tc) 50 mOhm @ 500mA, 10V 4.5V @ 250µA 60nC @ 10V 2845pF @ 25V 10V ±20V
APT11N80BC3G
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2,187
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Microsemi Corporation MOSFET N-CH 800V 11A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 [B] 156W (Tc) N-Channel 800V 11A (Tc) 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 60nC @ 10V 1585pF @ 25V 10V ±20V
IRFPC40
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RFQ
1,237
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Vishay Siliconix MOSFET N-CH 600V 6.8A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 150W (Tc) N-Channel 600V 6.8A (Tc) 1.2 Ohm @ 4.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 10V ±20V
R6020ENZ1C9
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RFQ
2,215
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Rohm Semiconductor MOSFET N-CH 600V 20A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 120W (Tc) N-Channel 600V 20A (Tc) 196 mOhm @ 9.5A, 10V 4V @ 1mA 60nC @ 10V 1400pF @ 25V 10V ±20V
SPW11N60C3FKSA1
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RFQ
2,689
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Infineon Technologies MOSFET N-CH 650V 11A TO-247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3 125W (Tc) N-Channel 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
IRFPC40PBF
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RFQ
1,639
In-stock
Vishay Siliconix MOSFET N-CH 600V 6.8A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 150W (Tc) N-Channel 600V 6.8A (Tc) 1.2 Ohm @ 4.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 10V ±20V