Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXFH180N20X3
RFQ
VIEW
RFQ
2,683
In-stock
IXYS 200V/180A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 780W (Tc) N-Channel 200V 180A (Tc) 7.5 mOhm @ 90A, 10V 4.5V @ 4mA 154nC @ 10V 10300pF @ 25V 10V ±20V
APT53N60BC6
RFQ
VIEW
RFQ
2,212
In-stock
Microsemi Corporation MOSFET N-CH 600V 53A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 417W (Tc) N-Channel 600V 53A (Tc) 70 mOhm @ 25.8A, 10V 3.5V @ 1.72mA 154nC @ 10V 4020pF @ 25V 10V ±20V
IXFH150N25X3
RFQ
VIEW
RFQ
764
In-stock
IXYS MOSFET N-CH 250V 150A TO247 HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 780W (Tc) N-Channel 250V 150A (Tc) 9 mOhm @ 75A, 10V 4.5V @ 4mA 154nC @ 10V 10400pF @ 25V 10V ±20V