Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPW60R060C7XKSA1
RFQ
VIEW
RFQ
2,470
In-stock
Infineon Technologies MOSFET N-CH 600V 35A TO247 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 162W (Tc) N-Channel - 600V 35A (Tc) 60 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V 2850pF @ 400V 10V ±20V
IPW65R190CFDAFKSA1
RFQ
VIEW
RFQ
716
In-stock
Infineon Technologies MOSFET N-CH 650V 17.5A TO247 Automotive, AEC-Q101, CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 151W (Tc) N-Channel - 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 700µA 68nC @ 10V 1850pF @ 100V 10V ±20V
IPW65R190CFDFKSA1
RFQ
VIEW
RFQ
2,273
In-stock
Infineon Technologies MOSFET N-CH 650V 17.5A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 151W (Tc) N-Channel - 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 10V ±20V
IPW90R500C3FKSA1
RFQ
VIEW
RFQ
2,552
In-stock
Infineon Technologies MOSFET N-CH 900V 11A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 156W (Tc) N-Channel - 900V 11A (Tc) 500 mOhm @ 6.6A, 10V 3.5V @ 740µA 68nC @ 10V 1700pF @ 100V 10V ±20V