Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW40N20
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1,010
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STMicroelectronics MOSFET N-CH 200V 40A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 160W (Tc) N-Channel - 200V 40A (Tc) 45 mOhm @ 20A, 10V 4V @ 250µA 75nC @ 10V 2500pF @ 25V 10V ±20V
FCH165N60E
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3,278
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ON Semiconductor MOSFET N-CH 600V 23A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 227W (Tc) N-Channel - 600V 23A (Tc) 165 mOhm @ 11.5A, 10V 3.5V @ 250µA 75nC @ 10V 2434pF @ 380V 10V ±20V
STW40NF20
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3,396
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STMicroelectronics MOSFET N-CH 200V 40A TO-247 STripFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 160W (Tc) N-Channel - 200V 40A (Tc) 45 mOhm @ 20A, 10V 4V @ 250µA 75nC @ 10V 2500pF @ 25V 10V ±20V
IPW60R160C6FKSA1
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RFQ
3,591
In-stock
Infineon Technologies MOSFET N-CH 600V 23.8A TO247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 176W (Tc) N-Channel - 600V 23.8A (Tc) 160 mOhm @ 11.3A, 10V 3.5V @ 750µA 75nC @ 10V 1660pF @ 100V 10V ±20V