- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,235
In-stock
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IXYS | MOSFET N-CH 1000V 1.5A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 60W (Tc) | N-Channel | - | 1000V | 1.5A (Tc) | 11 Ohm @ 1A, 10V | 4.5V @ 25µA | 23nC @ 10V | 480pF @ 25V | 10V | ±20V | |||
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VIEW |
3,170
In-stock
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Infineon Technologies | MOSFET N-CH 560V 9A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 83W (Tc) | N-Channel | - | 560V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
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VIEW |
2,562
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
