Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH110N25T
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3,873
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IXYS MOSFET N-CH 250V 110A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 694W (Tc) N-Channel - 250V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 3mA 157nC @ 10V 9400pF @ 25V 10V ±20V
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2,071
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IXYS MOSFET N-CH Linear L2™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 75V 240A (Tc) 7 mOhm @ 120A, 10V 4.5V @ 3mA 546nC @ 10V 19000pF @ 25V 10V ±20V
IXTX200N10L2
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3,554
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IXYS MOSFET N-CH 100V 200A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 100V 200A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 10V ±20V
IXTX110N20L2
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2,734
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IXYS MOSFET N-CH 200V 110A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 200V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 3mA 500nC @ 10V 23000pF @ 25V 10V ±20V
IXTX90N25L2
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3,781
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IXYS MOSFET N-CH 250V 90A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 250V 90A (Tc) 33 mOhm @ 45A, 10V 4.5V @ 3mA 640nC @ 10V 23000pF @ 25V 10V ±20V