- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,200
In-stock
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IXYS | MOSFET N-CH 1000V 24A PLUS 247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
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VIEW |
3,139
In-stock
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IXYS | MOSFET N-CH 1000V 24A PLUS247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 568W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 400 mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | 10V | ±20V | |||
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VIEW |
940
In-stock
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IXYS-RF | MOSFET N-CH 1000V 24A PLUS247-3 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 1000V | 24A (Tc) | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
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VIEW |
663
In-stock
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IXYS-RF | MOSFET N-CH 500V 55A PLUS247 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 500V | 55A (Tc) | 85 mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6700pF @ 25V | 10V | ±20V | |||
