Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH96N20P
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IXYS MOSFET N-CH 200V 96A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 600W (Tc) N-Channel - 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 4mA 145nC @ 10V 4800pF @ 25V 10V ±20V
IXTH96N20P
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IXYS MOSFET N-CH 200V 96A TO-247 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 600W (Tc) N-Channel - 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 250µA 145nC @ 10V 4800pF @ 25V 10V ±20V
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IXYS MOSFET N-CH 150V 96A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 150V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 4mA 110nC @ 10V 3500pF @ 25V 10V ±20V