Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPW60R041C6FKSA1
RFQ
VIEW
RFQ
3,047
In-stock
Infineon Technologies MOSFET N-CH 600V 77.5A TO 247-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 481W (Tc) N-Channel - 600V 77.5A (Tc) 41 mOhm @ 44.4A, 10V 3.5V @ 2.96mA 290nC @ 10V 6530pF @ 10V 10V ±20V
APT77N60BC6
RFQ
VIEW
RFQ
1,573
In-stock
Microsemi Corporation MOSFET N-CH 600V 77A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 481W (Tc) N-Channel Super Junction 600V 77A (Tc) 41 mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260nC @ 10V 13600pF @ 25V 10V ±20V