Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STW30NF20
RFQ
VIEW
RFQ
829
In-stock
STMicroelectronics MOSFET N-CH 200V 30A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 200V 30A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 38nC @ 10V 1597pF @ 25V 10V ±20V
IXTH30N25
RFQ
VIEW
RFQ
2,701
In-stock
IXYS MOSFET N-CH 250V 30A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 200W (Tc) N-Channel 250V 30A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 136nC @ 10V 3950pF @ 25V 10V ±20V