Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
HUFA75332G3
RFQ
VIEW
RFQ
1,577
In-stock
ON Semiconductor MOSFET N-CH 55V 60A TO-247 UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 145W (Tc) N-Channel - 55V 60A (Tc) 19 mOhm @ 60A, 10V 4V @ 250µA 85nC @ 20V 1300pF @ 25V 10V ±20V
IXFX160N30T
RFQ
VIEW
RFQ
2,941
In-stock
IXYS MOSFET N-CH 300V 160A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1390W (Tc) N-Channel - 300V 160A (Tc) 19 mOhm @ 60A, 10V 5V @ 8mA 335nC @ 10V 28000pF @ 25V 10V ±20V