- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,879
In-stock
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IXYS | MOSFET P-CH 100V 36A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 180W (Tc) | P-Channel | - | 100V | 36A (Tc) | 75 mOhm @ 18A, 10V | 5V @ 250µA | 95nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
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VIEW |
2,799
In-stock
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Infineon Technologies | MOSFET N-CH 200V 30A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 214W (Tc) | N-Channel | - | 200V | 30A (Tc) | 75 mOhm @ 18A, 10V | 4V @ 250µA | 123nC @ 10V | 2159pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,160
In-stock
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Infineon Technologies | MOSFET N-CH 200V 30A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 214W (Tc) | N-Channel | - | 200V | 30A (Tc) | 75 mOhm @ 18A, 10V | 4V @ 250µA | 123nC @ 10V | 2159pF @ 25V | 10V | ±20V | |||
