Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH200N085T
RFQ
VIEW
RFQ
1,430
In-stock
IXYS MOSFET N-CH 85V 200A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTH200N075T
RFQ
VIEW
RFQ
2,703
In-stock
IXYS MOSFET N-CH 75V 200A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 75V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 160nC @ 10V 6800pF @ 25V 10V ±20V
IXTX200N10L2
RFQ
VIEW
RFQ
3,554
In-stock
IXYS MOSFET N-CH 100V 200A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 100V 200A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 10V ±20V
IXFX200N10P
RFQ
VIEW
RFQ
775
In-stock
IXYS MOSFET N-CH 100V 200A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 10V ±20V