- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,278
In-stock
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IXYS | MOSFET P-CH 150V 36A TO-247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | P-Channel | - | 150V | 36A (Tc) | 110 mOhm @ 18A, 10V | 4.5V @ 250µA | 55nC @ 10V | 3100pF @ 25V | 10V | ±20V | |||
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VIEW |
2,879
In-stock
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IXYS | MOSFET P-CH 100V 36A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 180W (Tc) | P-Channel | - | 100V | 36A (Tc) | 75 mOhm @ 18A, 10V | 5V @ 250µA | 95nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
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VIEW |
1,783
In-stock
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Infineon Technologies | MOSFET N-CH 900V 36A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 417W (Tc) | N-Channel | - | 900V | 36A (Tc) | 120 mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270nC @ 10V | 6800pF @ 100V | 10V | ±20V | |||
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VIEW |
3,467
In-stock
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Microsemi Corporation | MOSFET N-CH 900V 36A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 390W (Tc) | N-Channel | Super Junction | 900V | 36A (Tc) | 120 mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252nC @ 10V | 7463pF @ 25V | 10V | ±20V | |||
