Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFP4004
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1,198
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Infineon Technologies MOSFET N-CH 40V 350A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 380W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 4V @ 250µA 330nC @ 10V 8920pF @ 25V 10V ±20V
IRFP7718PBF
RFQ
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RFQ
3,758
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Infineon Technologies MOSFET N CH 75V 195A TO247 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 517W (Tc) N-Channel - 75V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.7V @ 250µA 830nC @ 10V 29550pF @ 25V 6V, 10V ±20V
IRFP3006PBF
RFQ
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RFQ
2,908
In-stock
Infineon Technologies MOSFET N-CH 60V 257A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 375W (Tc) N-Channel - 60V 195A (Tc) 2.5 mOhm @ 170A, 10V 4V @ 250µA 300nC @ 10V 8970pF @ 50V 10V ±20V
IRLP3034PBF
RFQ
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RFQ
3,271
In-stock
Infineon Technologies MOSFET N-CH 40V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 341W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 2.5V @ 250µA 162nC @ 4.5V 10315pF @ 25V 4.5V, 10V ±20V
IRFP4004PBF
RFQ
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RFQ
1,951
In-stock
Infineon Technologies MOSFET N-CH 40V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 380W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 4V @ 250µA 330nC @ 10V 8920pF @ 25V 10V ±20V
IRFP7430PBF
RFQ
VIEW
RFQ
2,552
In-stock
Infineon Technologies MOSFET N CH 40V 195A TO247 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 366W (Tc) N-Channel - 40V 195A (Tc) 1.3 mOhm @ 100A, 10V 3.9V @ 250µA 460nC @ 10V 14240pF @ 25V 6V, 10V ±20V
IRFP7530PBF
RFQ
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RFQ
2,056
In-stock
Infineon Technologies MOSFET N CH 60V 195A TO247 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 341W (Tc) N-Channel - 60V 195A (Tc) 2 mOhm @ 100A, 10V 3.7V @ 250µA 411nC @ 10V 13703pF @ 25V 6V, 10V ±20V
IRFP4468PBF
RFQ
VIEW
RFQ
3,213
In-stock
Infineon Technologies MOSFET N-CH 100V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 100V 195A (Tc) 2.6 mOhm @ 180A, 10V 4V @ 250µA 540nC @ 10V 19860pF @ 50V 10V ±20V
IRFP4368PBF
RFQ
VIEW
RFQ
2,728
In-stock
Infineon Technologies MOSFET N-CH 75V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 75V 195A (Tc) 1.85 mOhm @ 195A, 10V 4V @ 250µA 570nC @ 10V 19230pF @ 50V 10V ±20V