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- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,721
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 125W (Tc) | N-Channel | - | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | |||
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VIEW |
1,033
In-stock
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IXYS | MOSFET N-CH 900V 25A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 900V | 25A (Tc) | 330 mOhm @ 500mA, 10V | 5V @ 8mA | 240nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
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VIEW |
3,549
In-stock
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Infineon Technologies | MOSFET N-CH 600V 25A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 208W (Tc) | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V | |||
