- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,101
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | 255W (Tc) | N-Channel | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
2,532
In-stock
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Infineon Technologies | MOSFET N-CH 600V 31A TO247-3 | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | 117W (Tc) | N-Channel | 600V | 31A (Tc) | 99 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | |||
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VIEW |
3,588
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | 255W (Tc) | N-Channel | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
3,648
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | CoolMOS™ CFD7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | 156W (Tc) | N-Channel | 650V | 31A (Tc) | 70 mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | 2721pF @ 400V | 10V | ±20V | |||
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VIEW |
2,387
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 31A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 180W (Tc) | N-Channel | 100V | 31A (Tc) | 77 mOhm @ 19A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 10V | ±20V | |||
