Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,013
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IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 390W (Tc) N-Channel - 150V 130A (Tc) 9 mOhm @ 65A, 10V 4.5V @ 1.5mA 80nC @ 10V 5230pF @ 25V 10V ±20V
IXTH130N20T
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1,739
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IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V
IRFP064VPBF
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3,908
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Infineon Technologies MOSFET N-CH 60V 130A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel - 60V 130A (Tc) 5.5 mOhm @ 78A, 10V 4V @ 250µA 260nC @ 10V 6760pF @ 25V 10V ±20V
IXTH130N10T
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950
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IXYS MOSFET N-CH 100V 130A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 10V ±20V
STY130NF20D
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2,330
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STMicroelectronics MOSFET N-CH 200V 130A MAX247 STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 MAX247™ 450W (Tc) N-Channel - 200V 130A (Tc) 12 mOhm @ 65A, 10V 4V @ 250µA 338nC @ 10V 11100pF @ 25V 10V ±20V